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INFINEON  IPP100N08N3GXKSA1  MOSFET Transistor, N Channel, 70 A, 80 V, 0.0084 ohm, 10 V, 2.8 V

INFINEON IPP100N08N3GXKSA1
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Produktu pārskats

The IPP100N08N3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
  • Excellent gate charge x RDS (ON) product (FOM)
  • Superior thermal resistance
  • Dual sided cooling
  • Low parasitic inductance
  • Low profile
  • Normal level
  • Ideal for high frequency switching and synchronous rectification
  • Qualified according to JEDEC for target applications
  • Halogen-free, Green device

Informācija par produktiem

Transistor Polarity:
N Channel
Continuous Drain Current Id:
70A
Drain Source Voltage Vds:
80V
On Resistance Rds(on):
0.0084ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.8V
Power Dissipation Pd:
100W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Lietošanas veidi

  • Power Management;
  • Consumer Electronics;
  • Communications & Networking;
  • Motor Drive & Control;
  • LED Lighting;
  • Automotive

Zināms arī kā

IPP100N08N3 G , SP000680856

Tiesību akti un vides aizsardzība

Jutības līmenis attiecībā pret mitrumu:
MSL 1 - Unlimited
Izcelsmes valsts:
Malaysia

Valsts, kurā veikts pēdējais nozīmīgais ražošanas process

Atbilst RoHS:
Tarifa Nr.:
85412900
Svars (kg):
.000454

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