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IPP111N15N3GXKSA1 - 

MOSFET Transistor, N Channel, 83 A, 150 V, 0.0094 ohm, 10 V, 3 V

INFINEON IPP111N15N3GXKSA1

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Ražotāja detaļas Nr.:
IPP111N15N3GXKSA1
Pasūtījuma kods:
2480854
Zināms arī kā:
IPP111N15N3 G , SP000677860
Tehnisko datu lapa:
(EN)
Skatiet visus tehniskos dokumentus

Informācija par produktiem

:
214W
:
175°C
:
83A
:
N Channel
:
3Pins
:
3V
:
-
:
-
:
150V
:
10V
:
TO-220
:
0.0094ohm
:
MSL 1 - Unlimited
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Produktu pārskats

The IPP111N15N3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
  • World's lowest RDS (ON)
  • Very low Qg and Qgd
  • Excellent gate charge x RDS (ON) product (FOM)
  • MSL1 rated 2
  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products
  • Normal level
  • Qualified according to JEDEC for target applications
  • Halogen-free, Green device

Lietošanas veidi

Power Management, Motor Drive & Control, Automotive, Communications & Networking, Audio

Zināms arī kā

IPP111N15N3 G , SP000677860