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INFINEON  IPP111N15N3GXKSA1  MOSFET Transistor, N Channel, 83 A, 150 V, 0.0094 ohm, 10 V, 3 V

INFINEON IPP111N15N3GXKSA1
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Produktu pārskats

The IPP111N15N3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
  • World's lowest RDS (ON)
  • Very low Qg and Qgd
  • Excellent gate charge x RDS (ON) product (FOM)
  • MSL1 rated 2
  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products
  • Normal level
  • Qualified according to JEDEC for target applications
  • Halogen-free, Green device

Informācija par produktiem

Transistor Polarity:
N Channel
Continuous Drain Current Id:
83A
Drain Source Voltage Vds:
150V
On Resistance Rds(on):
0.0094ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
214W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Lietošanas veidi

  • Power Management;
  • Motor Drive & Control;
  • Automotive;
  • Communications & Networking;
  • Audio

Zināms arī kā

IPP111N15N3 G , SP000677860

Tiesību akti un vides aizsardzība

Jutības līmenis attiecībā pret mitrumu:
MSL 1 - Unlimited
Izcelsmes valsts:
Malaysia

Valsts, kurā veikts pēdējais nozīmīgais ražošanas process

Atbilst RoHS:
Tarifa Nr.:
85412900
Svars (kg):
.002008

Līdzīgi produkti