Low

IS42S32800G-7BLI - 

SDRAM, 256MBIT, 143MHZ, TFBGA-90

INTEGRATED SILICON SOLUTION (ISSI) IS42S32800G-7BLI

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Ražotāja detaļas Nr.:
IS42S32800G-7BLI
Pasūtījuma kods:
2409135
Tehnisko datu lapa:
(EN)
Skatiet visus tehniskos dokumentus

Informācija par produktiem

:
-40°C
:
85°C
:
7ns
:
8M x 32bit
:
90Pins
:
-
:
TFBGA
:
LVTTL
:
Cut Tape
:
-
:
MSL 3 - 168 hours
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Produktu pārskats

The IS42S32800G-7BLI is a Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized in 2Meg x 32-bit x 4 banks. The 256Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3 and 3.3V Vddq memory systems containing 268435456-bit. It is internally configured as a quad-bank DRAM with a synchronous interface. It includes an AUTOREFRESH MODE and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. It has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide pre-charge time and the capability to randomly change column addresses on each clock cycle during burst access.
  • Clock frequency - 143MHz
  • Fully synchronous, all signals referenced to a positive clock edge
  • Internal bank for hiding row access/pre-charge
  • LVTTL interface
  • Programmable burst length
  • Programmable burst sequence - sequential/interleave
  • Auto refresh (CBR)
  • Self refresh
  • 4096 Refresh cycles every 16 or 64ms
  • Random column address every clock cycle
  • Programmable CAS latency
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and pre-charge command
  • Speed - 7ns

Lietošanas veidi

Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics, Automotive, Commercial