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ON SEMICONDUCTOR  2N5060G  Thyristor, 30 V, 350 µA, 0.32 A, 800 mA, TO-92, 3 Pins

ON SEMICONDUCTOR 2N5060G
Technical Data Sheet (111.14KB) EN Skatiet visus tehniskos dokumentus

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Produktu pārskats

The 2N5060G is an annular PNPN Silicon Controlled Rectifier designed for high volume consumer applications, such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors and sensing and detection circuits. It's package is readily adaptable for use in automatic insertion equipment.
  • 200mA Maximum sensitive gate trigger current
  • 50mA Maximum, TC=110°C low reverse and forward blocking current
  • 5mA Maximum low holding current
  • Passivated surface for reliability and uniformity

Informācija par produktiem

Peak Repetitive Off-State Voltage, Vdrm:
30V
Gate Trigger Current Max, Igt:
350µA
Current It av:
320mA
On State RMS Current IT(rms):
800mA
Thyristor Case Style:
TO-92
No. of Pins:
3Pins
Peak Non Rep Surge Current Itsm 50Hz:
10A
Holding Current Max Ih:
5mA
Gate Trigger Voltage Max Vgt:
1.2V
Operating Temperature Max:
110°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Lietošanas veidi

  • Signal Processing;
  • Motor Drive & Control;
  • Sensing & Instrumentation;
  • Consumer Electronics;
  • Power Management

Tiesību akti un vides aizsardzība

Jutības līmenis attiecībā pret mitrumu:
-
Izcelsmes valsts:
Vietnam

Valsts, kurā veikts pēdējais nozīmīgais ražošanas process

Atbilst RoHS:
Tarifa Nr.:
85413000
Svars (kg):
.000423

Līdzīgi produkti