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LM5109BMA - 

Dual MOSFET Driver, Half Bridge, 8V-14V Supply, 1A Out, 27ns Delay, SOIC-8

TEXAS INSTRUMENTS LM5109BMA

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Ražotāja detaļas Nr.:
LM5109BMA
Pasūtījuma kods:
1333960
Tehnisko datu lapa:
(EN)
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Informācija par produktiem

:
27ns
:
-40°C
:
1A
:
29ns
:
SOIC
:
125°C
:
8Pins
:
-
:
-
:
8V
:
Each
:
14V
:
Half Bridge
:
MSL 1 - Unlimited
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Produktu pārskats

The LM5109BMA is a high voltage 1A Peak Half Bridge Gate Driver, designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails.
  • Drives both a high-side and low-side N-channel MOSFET
  • 1A Peak output current (1.0A sink/1.0A source)
  • Independent TTL compatible inputs
  • Bootstrap supply voltage to 108VDC
  • Fast propagation times (30ns typical)
  • Drives 1000pF load with 15ns rise and fall times
  • Excellent propagation delay matching (2ns typical)
  • Supply rail under-voltage lockout
  • Low power consumption
  • Pin compatible with ISL6700

Lietošanas veidi

Power Management, Motor Drive & Control

Brīdinājumi

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

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