47.2A Gallium Nitride (GaN) FETs:
Atrasti 2 produktiSkatīt
Pircējs
Inženieris
Ražotājs
Drain Source Voltage Vds
Continuous Drain Current Id
Drain Source On State Resistance
Typical Gate Charge
Transistor Case Style
Transistor Mounting
No. of Pins
Product Range
Qualification
Iepakojums
Piemērotais(-ie) filtrs(-i)
1 Atlasīts(-ie) filtrs(-i)
| Salīdzināt | Cena par | Daudzums | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+ 20,970 € 5+ 19,850 € 10+ 18,720 € 50+ 15,550 € 100+ 12,380 € Citas cenas... | Min.: 1 / Vair.: 1 | 650V | 47.2A | 0.041ohm | 22nC | TO-247 | Through Hole | 3Pins | - | - | |||||
Each | 1+ 19,230 € 5+ 15,690 € 10+ 12,170 € 50+ 12,160 € 100+ 12,150 € Citas cenas... | Min.: 1 / Vair.: 1 | 650V | 47.2A | 0.041ohm | 22nC | TO-247 | Through Hole | 3Pins | SuperGaN Series | AEC-Q101 | |||||

