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| Daudzums | |
|---|---|
| 100+ | 0,302 € |
| 500+ | 0,244 € |
| 1000+ | 0,219 € |
Informācija par produktiem
Produktu pārskats
The FDC5612 is a N-channel MOSFET produced using PowerTrench® technology. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- High performance Trench technology for extremely low RDS (ON)
- 12.5nC typical low gate charge
Brīdinājumi
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehniskie parametri
N Channel
4.3A
SuperSOT
10V
1.6W
150°C
-
No SVHC (27-Jun-2024)
60V
0.055ohm
Surface Mount
2.2V
6Pins
-
MSL 1 - Unlimited
Tehniskā dokumentācija (4)
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