Nepieciešams vairāk?
| Daudzums | |
|---|---|
| 1+ | 2,530 € | 
| 10+ | 2,210 € | 
| 25+ | 1,830 € | 
| 50+ | 1,640 € | 
| 100+ | 1,520 € | 
| 250+ | 1,420 € | 
| 500+ | 1,340 € | 
| 1000+ | 1,290 € | 
Informācija par produktiem
Produktu pārskats
The FM25C160B-G is a 16kbit Non-volatile Memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system level reliability problems caused by serial flash, EEPROM and other non-volatile memories. Unlike serial flash and EEPROM, this memory performs write operations at bus speed. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition the product offers substantial write endurance compared with other non-volatile memories.
- No write delays are incurred
- Very fast serial peripheral interface
- Direct hardware replacement for serial flash and EEPROM
- Sophisticated write protection scheme
- -40 to 85°C Industrial temperature range
Lietošanas veidi
Computers & Computer Peripherals
Tehniskie parametri
FRAM
2K x 8bit
-
8Pins
5.5V
85°C
MSL 3 - 168 hours
16Kbit
SPI
SOIC
4.5V
-40°C
-
No SVHC (21-Jan-2025)
Tehniskā dokumentācija (1)
FM25C160B-G alternatīvas
Atrasti 2 produkti
Tiesību akti un vides aizsardzība
Valsts, kurā veikts pēdējais nozīmīgais ražošanas processIzcelsmes valsts:United States
Valsts, kurā veikts pēdējais nozīmīgais ražošanas process
RoHS
RoHS
Produkta atbilstības sertifikāts