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Daudzums | |
---|---|
1+ | 3,550 € |
10+ | 2,590 € |
100+ | 1,620 € |
500+ | 1,250 € |
1000+ | 1,230 € |
Informācija par produktiem
Produktu pārskats
The IGW30N60T is a Low Loss IGBT in TRENCHSTOP™ and field-stop technology. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest Vce (sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
- Very soft, fast recovery anti-parallel emitter controlled diode
- High ruggedness, temperature stable behaviour
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Highest efficiency - Low conduction and switching losses
- High device reliability
- 5µs Short-circuit withstand time
- Green product
- Halogen-free
Lietošanas veidi
Power Management, Alternative Energy, Consumer Electronics, HVAC, Industrial
Brīdinājumi
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tehniskie parametri
30A
187W
TO-247
175°C
-
No SVHC (21-Jan-2025)
2.05V
600V
3Pins
Through Hole
-
Tehniskā dokumentācija (1)
IGW30N60TFKSA1 alternatīvas
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