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Daudzums | |
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1+ | 2,200 € |
10+ | 1,520 € |
100+ | 1,100 € |
500+ | 1,060 € |
1000+ | 0,825 € |
5000+ | 0,793 € |
Informācija par produktiem
Produktu pārskats
The IRF1407STRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
Lietošanas veidi
Power Management
Tehniskie parametri
N Channel
100A
TO-263 (D2PAK)
10V
3.8W
175°C
-
Lead (21-Jan-2025)
75V
7800µohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Tehniskā dokumentācija (1)
IRF1407STRLPBF alternatīvas
Atrasti 2 produkti
Tiesību akti un vides aizsardzība
Valsts, kurā veikts pēdējais nozīmīgais ražošanas processIzcelsmes valsts:China
Valsts, kurā veikts pēdējais nozīmīgais ražošanas process
RoHS
RoHS
Produkta atbilstības sertifikāts