S25FL256SAGBHVB00

S25FL256SAGBHVB00 is a FL-S flash non-volatile memory using MIRRORBIT™ technology - that stores two data bits in each memory array transistor, eclipse architecture - that dramatically improves program and erase performance, 65-nm process lithography. This multiple width interface is called SPI multi-I/O or MIO. In addition, the FL-S family adds support for DDR read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The eclipse architecture features a page programming buffer that allows up to 128 words (256bytes) or 256 words (512bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms.

• 256Mb density, 65-nm MIRRORBIT™ process technology, 133MHz speed
• 24-ball BGA package type
• Industrial plus temperature range from -40 to +105°C
• Uniform 64KB sectors with Hybrid 4KB sectors, EHPLC, 4 × 6 ball BGA footprint with RESET#, VIO
• SPI clock polarity and phase modes 0 and 3
• Commands, Normal, fast, dual, quad, fast DDR, dual DDR, quad DDR
• Common flash interface (CFI) data for configuration information, programming (1.5MBps)
• Quad-input page programming (QPP) for slow clock systems, erase (0.5 to 0.65MBps)
• Cycling endurance, 100000 program-erase cycles, minimum
• Data retention, 20 year data retention, minimum, OTP array of 1024bytes