SIC772CD-T1-GE3

The SIC772CD-T1-GE3 is an integrated Power Stage Solution optimized for synchronous buck applications to offer high current, high efficiency and high power density performance. The internal power MOSFETs utilizes Vishay's state-of-the-art TrenchFET Gen IV technology that delivers industry bench-mark performance to significantly reduce switching and conduction losses. The SiC772 incorporates an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control and integrated bootstrap Schottky diode, a thermal warning (THWn) alerts the system of excessive junction temperature. This driver is also compatible with wide range of PWM controller with the support of tri-state PWM, 5V PWM logic and skip mode (SMOD) for improve light load efficiency.

• Industry benchmark MOSFET with integrated Schottky diode
• Delivers in excess of 40A continuous current
• 86% Peak efficiency at 19 to 1V and 18A
• High frequency operation up to 1.5MHz
• Power MOSFETs optimized for 19V input stage
• 5V PWM logic with tri-state and hold-off
• SMOD logic for light load efficiency boost
• Thermal monitor flag
• Compliant with Intel DrMOS 4.0 specification

Lietošanas veidi

Signal Processing, Computers & Computer Peripherals