1.333kW RF FETs | Farnell Latvija

Atrodiet milzīgu 1.333kW RF FETs klāstu veikalā Farnell Latvija. Mūsu rīcībā ir plašs RF FETs klāsts, piemēram, 250mW, 200mW, 1.333kW & 6W RF FETs no pasaules labākajiem ražotājiem, tostarp: Nxp.

Piemērotais(-ie) filtrs(-i)

Power Dissipation

:

1.333kW

1 Atlasīts(-ie) filtrs(-i)

Salīdzināt					Cena par		Daudzums

	MRFE6VP61K25HR5	2776254 Data Sheet RoHS Date/Lot Code	NXP RF FET Transistor 133 VDC 1.333 kW 1.8 MHz 600 MHz NI-1230H-4S		Each (Supplied on Cut Tape) Griežama lente	1+ 876,670 €	Min.: 1 / Vair.: 1	133VDC	1.333kW	1.8MHz	600MHz	NI-1230H-4S	4Pins	225°C	N Channel	Flange
	MRFE6VP61K25HR6	2776247 Data Sheet RoHS Date/Lot Code	NXP RF FET Transistor 133 VDC 1.333 kW 1.8 MHz 600 MHz NI-1230H-4S		Each (Supplied on Cut Tape) Griežama lente	1+ 326,200 € 5+ 319,680 €	Min.: 1 / Vair.: 1	133VDC	1.333kW	1.8MHz	600MHz	NI-1230H-4S	4Pins	225°C	N Channel	Flange
	MRFX600GSR5	2985304 Data Sheet RoHS Date/Lot Code	NXP RF FET Transistor 179 V 1.333 kW 1.8 MHz 400 MHz NI-780GS		Each (Supplied on Cut Tape) Griežama lente	1+ 182,790 € 5+ 180,790 €	Min.: 1 / Vair.: 1	179V	1.333kW	1.8MHz	400MHz	NI-780GS	4Pins	225°C	N Channel	Surface Mount
	MRFX600HR5	2985302 Data Sheet RoHS	NXP RF FET Transistor 179 V 1.333 kW 1.8 MHz 400 MHz NI-780H		Each (Supplied on Cut Tape) Griežama lente	1+ 216,400 €	Min.: 1 / Vair.: 1	179V	1.333kW	1.8MHz	400MHz	NI-780H	4Pins	225°C	N Channel	Flange
	MRFX600HSR5	2985303 Data Sheet RoHS Date/Lot Code	NXP RF FET Transistor 179 V 1.333 kW 1.8 MHz 400 MHz NI-780S		Each (Supplied on Cut Tape) Griežama lente	1+ 181,440 € 5+ 179,460 €	Min.: 1 / Vair.: 1	179V	1.333kW	1.8MHz	400MHz	NI-780S	4Pins	225°C	N Channel	Flange
	MRF13750HR5	2985243 Data Sheet RoHS Date/Lot Code	NXP RF FET Transistor 105 V 1.333 kW 700 MHz 1.3 GHz NI-1230H-4S		Each (Supplied on Cut Tape) Griežama lente	50+ 855,750 €	Min.: 50 / Vair.: 50	105V	1.333kW	700MHz	1.3GHz	NI-1230H-4S	4Pins	225°C	N Channel	Flange
	MRFX600GSR5	2985304RL Data Sheet RoHS Date/Lot Code	NXP RF FET Transistor 179 V 1.333 kW 1.8 MHz 400 MHz NI-780GS		Each (Supplied on Cut Tape) Pārtīšana Iepakojuma iespējas	5+ 180,790 €	Min.: 10 / Vair.: 1	179V	1.333kW	1.8MHz	400MHz	NI-780GS	4Pins	225°C	N Channel	Surface Mount

Vienības lapā:

1-7 no 7 vienībām

no 1 lapas(-u)

vadošo ražotāju

ONSEMI

NEXPERIA

VISHAY

STMICROELECTRONICS

MULTICOMP PRO

INFINEON

NXP

ROHM

New Semiconductors - Discretes

650 V, Gallium Nitride (GaN) FET

650 V, Gallium Nitride (GaN) FET

NEXPERIA

H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter

H-Bridge in APM16 Series for LLC and Phase-shifted DC-DC Converter

ONSEMI

Silicon-carbide (SiC) N-Channel Power MOSFET

Silicon-carbide (SiC) N-Channel Power MOSFET

MICROCHIP

SIC Mosfet Module, 900V, 149A

SIC Mosfet Module, 900V, 149A

ONSEMI

onsemi EliteSiC - 650V to 1700V - Now in stock

onsemi EliteSiC - 650V to 1700V - Now in stock

ONSEMI

Low Noise PrestoMOS™ - High Speed Trr Series

Low Noise PrestoMOS™ - High Speed Trr Series

ROHM